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電子・光・磁性材料のアドバンス校正サンプル
CuとSnの蒸発量をそれぞれ0.01gと0.07gとして図３にプロットしたと同様な手順でCuSeとSnSeの薄膜を順次蒸着して得られたCTSe薄膜のXRDパターンを図４に示す。この図に、CuSeおよびSnSe薄膜のXRDパターンも示す。これらをCTSeの回折図と比較することで、CTSe薄膜の二次相に対応する反射をより高い精度で得ることができた。
Cu2SnSe3の薄膜は、CuSeとSnSeの薄膜を２段階プロセスで順次蒸発させる方法を用いて成長させた。XRDによる評価では、Cu2SnSe3相を主に含む化合物の形成が確認されたが、２つの前駆体の蒸発順序と調製パラメータは、相だけでなくCTSe薄膜の構造と、光学特性および電気輸送特性に大きく影響する。分光透過率の測定による光学特性評価では、CTSe薄膜は透過率が低く、結晶学的品質が低いことが明らかになった。これは、おそらく構造的欠陥と固有の欠陥に関連したもので、CTSe薄膜の特性を改善するためにさらなる研究が必要であることを示唆している。さらに、Cu2SnSe3膜の特性として、エネルギーバンドギャップ（Eg）が約1.6eVのp型導電性であることが明らかなった。
温度依存の導電率を測定した結果、CTSe膜の導電率は価電子帯の自由キャリア輸送に主に影響されることがわかった。高温（T＞550K）におけるσの増加は、深いアクセプタ不純物に由来するキャリア密度の増加に起因すると考えられ、一方、低温（T＜350K)で観測されたσの変化は、二次相と関連した浅いアクセプタ不純物に由来するキャリア密度の変化に起因するものと考えられる。
Figure 4, shows a CTSe thin film the XRD pattern obtained through sequential deposition of thin films of CuSe and SnSe, with a preparation routine like one plotted in Fig. 3 and evaporated masses of Cu and Sn of 0.01 and 0.07 g respectively. The Figure 4 showed the XRDs for films of CuSe and SnSe . They are compared with the CTSe diffractogrammy in order to get with a greater degree of accuracy the reflections corresponding to secondary phases in the thin CTSe films.
Cu2SnSe3 thin films were grown with a method based on sequential evaporation of thin films of CuSe, and SnSe in a two stage process. Characterization done by XRD gave evidence of the compound formation containing predominantly the Cu2SnSe3 phase, however the sequence with the binary precursors are evaporated and the preparation parameters, more affects the phase as well the structural, optical and electric transportation properties of the thin CTSe films. Moreover optical characterization performed by spectral transmittance measurements revealed that the CTSe have low transmittance and also poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be done to improve CTSe films properteis. The results revealed that characterize of the Cu2SnSe3 films is done to get p–type conductivity and an energy band gap Eg of somewhat 1.6 eV also.
Conductivity measurements on temperature dependence revealed conductivity of the CTSe is predominantly affected with free carrier transport in states of the valence band. In high temperatures ranges (T > 550K) the increase of σ could be attributed to an increase of the carrier densities coming from deep acceptor impurities, whereas the change of σ observed in the low temperatures range (T < 350K) can be attributed to a changes of the density of carrier coming from shallow acceptor impurities associated to secondary phases.
Figure 4, shows a CTSe thin film the X-ray powder diffraction (XRD) pattern of a thin CTSe film obtained prepared by through sequential deposition of thin films of CuSe and SnSe thin films, with using a preparation routine like one plottedshown 1 in Figure. 3 2 and with evaporated masses of Cu and Sn of 0.01 and 0.07 g, respectively. The Figure 4 also showed shows3 the XRD patterns for films of CuSe and SnSe films . Thesey are XRD patterns were compared with the CTSe datetime=grammy in order to get identify the reflections corresponding to secondary phases in the thin CTSe films with a greater degree of accuracy the reflections corresponding to secondary phases in the thin CTSe films.4
Cu2SnSe3 thin films were grown with using a method based on sequential evaporation of thin films of CuSe, and SnSe thin films in a two two-stage process. Characterization done performed by XRD gave evidence of theproved the formation of a compound formation containing predominantly the Cu2SnSe3 phase;, however, the sequence with in which the binary precursors are evaporated and the preparation parameters, more significantly affects the phase formation as well as the structural, optical, and electrical transportation properties5 of the thin CTSe films. Moreover oOptical characterization performed byusing6 spectral transmittance measurements revealed that the CTSe films have low transmittance and also poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be done performed to improve CTSe films properteisproperties. Furthermore7 , The the results revealed demonstrated that characterize of the Cu2SnSe3 films is could be potentially used as a done to get p -type conductivity semiconductor 8 and with an energy band gap (Eg) of approximatelysomewhat 1.6 eV also.
Temperature-dependent Conductivity conductivity measurements on temperature dependence revealed that 9 the conductivitiesy of the CTSe films were is predominantly affected with by the transport of free carriers transport in states of the valence band. In high temperatures ranges (T > 550 K), the increase of σ could be attributed to an the increase of in the carrier densityies coming originating from deep acceptor impurities, whereas the change of σ observed in the low temperatures range (T < 350 K) can be attributed to a changes of in the carrier density of carrier coming originating from shallow acceptor impurities associated to with secondary phases.
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Figure 4 shows the X-ray powder diffraction (XRD) pattern of a thin CTSe film prepared by sequential deposition of CuSe and SnSe thin films using a preparation routine shown in Figure. 3 with evaporated masses of Cu and Sn of 0.01 and 0.07 g, respectively. Figure 4 also shows the XRD patterns of CuSe and SnSe films. These XRD patterns were compared with the CTSe diffractogram to identify the reflections corresponding to secondary phases in the thin CTSe films with a greater degree of accuracy.
Cu2SnSe3 thin films were grown using a method based on sequential evaporation of CuSe and SnSe thin films in a two-stage process. Characterization performed by XRD proved the formation of a compound containing predominantly the Cu2SnSe3 phase; however, the sequence in which the binary precursors are evaporated and the preparation parameters significantly affect the phase formation as well as the structural, optical, and electrical transport properties of the thin CTSe films. Optical characterization using spectral transmittance measurements revealed that the CTSe films have low transmittance and poor crystallographic quality, probably associated to structural and native defects, indicating that further studies must be performed to improve CTSe film properties. Furthermore, the results demonstrated that the Cu2SnSe3 films could be potentially used as a p-type semiconductor with an energy band gap (Eg) of approximately 1.6 eV.
Temperature-dependent conductivity measurements revealed that the conductivities of the CTSe films were predominantly affected by the transport of free carriers in the valence band. In high temperatures (T > 550 K), the increase of σ could be attributed to the increase in the carrier density originating from deep acceptor impurities, whereas the change of σ observed in low temperatures (T < 350 K) can be attributed to changes in the carrier density originating from shallow acceptor impurities associated with secondary phases.
